(Nanowerk Spotlight) Doping, which can provide charge carriers to semiconductors, is an essential technology for semiconductors and devices, and it can be classified as n- and p-doping depending on ...

Professor Jiwoong Yang and his research team at the Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST; President Kunwoo Lee) successfully developed ...

(Nanowerk News) Professor Jiwoong Yang and his research team at the Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST; President Kunwoo Lee) ...

Researchers at the National University of Singapore (NUS) have observed a doping-tunable charge density wave (CDW) in a single-layer semiconductor, Chromium(III) selenide (Cr 2 Se 3), extending the ...

A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...

Substitutional doping from foreign elements stands out as a preferred method for precisely tailoring the electronic band structure, conduction type, and carrier concentration of pristine materials. In ...

A recent article in Nature Communications introduced a method for precise p- and n-type substitutional doping of two-dimensional (2D) semiconductors. This method was applied for the one-step growth of ...

RALEIGH – Researchers from North Carolina State University used computational analysis to predict how optical properties of semiconductor material zinc selenide (ZnSe) change when doped with halogen ...

Researchers at Stanford University and TSMC have shown that adding an ultra-thin Al 2 O 3 interlayer improves reliability and ...

A p-n junction is an interface or boundary between p-type and n-type semiconductor materials within a single semiconductor crystal. The positive (p) side contains excess holes, while the negative (n) ...