Silicon MOSFET power transistors have been a mainstay of power-supply design for years. And while they’re still widely used, gallium-nitride (GaN) transistors are gradually replacing MOSFETs in some ...
Power gallium-nitride (GaN) FETs have been available for several years now, but some engineers have been slow to adopt them in power equipment despite their superior characteristics. Getting ...
For GaN FETs applications in 48V power systems, one existing approach is to use a DSP based digital solution to realize high frequency and high efficiency designs. This is in large part due to the ...
The next generation of 650 and 600-V gallium nitride (GaN) field-effect transistors (FETs) by Texas Instruments will be a key factor for automotive and industrial applications. These new GaN FET ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc. (OTCQB: TGAN)—a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors—today ...
Gallium nitride (GaN) based transistors have been around for many years for rf applications. More recently, the focus has been on development of cost effective, high performance GaN based devices for ...
IRVINE, Calif., March 17, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation(Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, today ...
Transphorm Inc. (OTCQB: TGAN)-a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors-today announced its second 900 V GaN FET ...
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