There is a lot of interest in the WBG technologies such as SiC and GaN and the purpose here is to show that both Si and WBG materials (SiC and GaN) all have their place within the power industry and ...
Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated within its latest series of InnoMux-branded multi-output fly-back ac-dc ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc. (OTCQB: TGAN)—a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors—today ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...
Wide-bandgap semiconductors are an attractive material for power devices due to low losses, improved temperature capability, and high thermal conductivity. Compared to silicon (Si), with a larger ...
The first of two GaN MOSFET introductions from International Rectifier can switch up to 5 MHz, deliver up to 30 A output, and have a figure of merit better than their silicon cousins. Tim McDonald, ...
Texas InstrumentsTXN or TI recently launched LMG5200 GaN FET power stage, the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage model. Samples of ...
For satellite and cellular base stations, a GaN (gallium-nitride) power FET from Toshiba Corp surpasses the output of GaAs (gallium-arsenide) devices, improving power density by a factor of eight.
This latest release is, according to Nexperia, intended to address the growing demand for higher efficiency and more compact systems. The new low and high-voltage e-mode GaN FETs will address multiple ...
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