Fairchild Semiconductor has introduced a new series of high-efficiency N-channel MOSFETs that boast up to 8kV ESD (HBM) voltage protection ––90 percent higher than existing devices on the market. The ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, ...
The LND150 is a high voltage N-channel depletion-mode DMOS FET. The gate of the device is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision ...
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