A technical paper titled “Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors” was published by researchers at Korea University.
The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...
This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results